MIL-STD-1886 (NOTICE 1)

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MIL-STD-1886 (NOTICE 1), MILITARY STANDARD: TUNGSTEN CARBIDE-COBALT COATING, DETONATION PROCESS FOR (27 MAR 1998) [S/S BY MIL-HDBK-1886]., MIL-STD-1886(AT), dated 23 March 1992, is hereby canceled without replacement;however, the instructional information from this standard has been preserved in its entirety inMIL-HDBK-1886(AT).
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Product Code:SAE AS413
Title:Temperature Instruments (Reciprocating Engine Powered Aircraft) (NONCURRENT Nov 1996)
Issuing Committee:A-4 Aircraft Instruments Committee
Scope:This Aerospace Standard establishes the minimum sage performance standards for electrical type temperature instruments primarily for use with reciprocating engine powered transport aircraft, the operation of which may subject the instruments to the environmental conditions specified in Section 3.4. This Aerospace Standard covers two basic types of temperature instruments as follows: TYPE I Radiometer type, actuated by changes in electrical resistance of a temperature sensing electrical resistance element; the resistance changes being obtained by temperature changes of the temperature sensing resistance element. TYPE II: Millivoltmeter type, operated and actuated by varying E.M.F. output of a thermocouple; the varying E.M.F. input to the instrument being obtained by temperature changes of the temperature sensing thermocouple.【英文标准名称】:Semiconductordevices-Mechanicalandclimatictestmethods-Part38:Softerrortestmethodforsemiconductordeviceswithmemory
【原文标准名称】:半导体器件.机械和气候试验方法.带存储器的半导体器件用软错误试验法
【标准号】:BSEN60749-38-2008
【标准状态】:现行
【国别】:英国
【发布日期】:2008-06-30
【实施或试行日期】:2008-06-30
【发布单位】:英国标准学会(GB-BSI)
【起草单位】:BSI
【标准类型】:()
【标准水平】:()
【中文主题词】:加速的;α辐射;气候试验;部件;损伤;缺陷;电气工程;电学测量;电子工程;电子设备及元件;集成电路;干扰;测量;机械测试;电力电子学;半导体器件;半导体;测试;测试条件
【英文主题词】:Accelerated;Alpharadiation;Climatictests;Components;Damage;Defects;Definition;Definitions;Electricalengineering;Electricalmeasurement;Electronicengineering;Electronicequipmentandcomponents;Integratedcircuits;Interferences;Measurement;Mechanicaltesting;Powerelectronics;Semiconductordevices;Semiconductors;Testing;Testingconditions
【摘要】:ThispartofIEC60749establishesaprocedureformeasuringthesofterrorsusceptibilityofsemiconductordeviceswithmemorywhensubjectedtoenergeticparticlessuchasalpharadiation.Twotestsaredescribed;anacceleratedtestusinganalpharadiationsourceandan(unaccelerated)real-timesystemtestwhereanyerrorsaregeneratedunderconditionsofnaturallyoccurringradiationwhichcanbealphaorotherradiationsuchasneutron.Tocompletelycharacterizethesofterrorcapabilityofanintegratedcircuitwithmemory,thedevicemustbetestedforbroadhighenergyspectrumandthermalneutronsusingadditionaltestmethods.Thistestmethodmaybeappliedtoanytypeofintegratedcircuitwithmemorydevice.
【中国标准分类号】:L40
【国际标准分类号】:31_080_01
【页数】:16P.;A4
【正文语种】:英语